Large-area photonic lift-off process for flexible thin-film transistors

نویسندگان

چکیده

Abstract Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing substrate from a carrier without damaging remains challenging. Here we utilize large-area, high-throughput photonic lift-off (PLO) process to rapidly separate films rigid carriers. PLO uses 150 µs pulse broadband light flashlamps functional thin substrates coated with absorber layer (LAL). Modeling indicates that polymer/LAL interface reaches above 800 °C PLO, top surface PI below 120 °C. An array indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated polyimide and photonically lifted off carrier. The TFT mobility unchanged PLO. TFTs were mechanically robust, no reduction in while flexed.

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ژورنال

عنوان ژورنال: npj flexible electronics

سال: 2022

ISSN: ['2397-4621']

DOI: https://doi.org/10.1038/s41528-022-00145-z